Reliability and integration of ultra-thin gate dielectrics for advanced CMOS

• 9 June 1997
• journal article
• Published by Elsevier in Microelectronic Engineering
• Vol. 36  (1-4) , 13-20
• https://doi.org/10.1016/s0167-9317(97)00007-5

Abstract

Keywords

• DIELECTRICS
• NITROGEN
• CMOS
• THICKNESS
• GATE DIELECTRIC
• TECHNOLOGIES
• INTEGRITY AND RELIABILITY