Origin of the enhancement of negative differential resistance at low temperatures in double-barrier resonant tunneling structures
- 1 July 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (7) , 301-303
- https://doi.org/10.1109/55.29659
Abstract
An explanation of the increased peak-to-valley current ratio for double-barrier resonant tunneling structures (DBRTSs) operated at low temperatures is proposed. It was found that this phenomenon is an inherent property of DBRTSs not caused by the suppression of thermionic current over barriers. The energy distributions of electrons at different temperatures result in variations of peak and valley currents.<>Keywords
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