Selective-epitaxial base technology with 14 ps ECL-gate delay, for low power wide-band communication systems
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 747-750
- https://doi.org/10.1109/iedm.1995.499326
Abstract
A silicon bipolar technology is presented that incorporates a selectively epitaxially grown base in a double-polysilicon transistor. Si-bases as well as Si-SiGe-multilayer bases are applied. Both result in excellent device performance, with cut-off and maximum oscillation frequencies up to 45 GHz, and ECL-gate delays down to 13.7 ps. DC-coupled broad-band amplifiers for 15 Gbit/s optical data links have been fabricated, providing record bandwidths of 13.2 GHz. As selective epitaxial growth is performed at 700/spl deg/C in a production epitaxial reactor, this technology can easily be combined with current semiconductor manufacturing technology.Keywords
This publication has 2 references indexed in Scilit:
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