Improvement of InAs quantum-dot optical properties by strain compensation with GaNAs capping layers
- 24 November 2003
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (22) , 4524-4526
- https://doi.org/10.1063/1.1629803
Abstract
Two kinds of self-assembled InAs quantum dots (QDs) grown on GaAs (001) substrates were studied. One is capped with GaAs layers and the other with GaNAs strain-compensating layers. Photoluminescence (PL) measurements on the two kinds of InAs QDs showed distinct dependence on the selection of the capping layers. The homogeneity and luminescence efficiency of the InAs QDs were much improved when the net strain was reduced with GaNAs layers. These results demonstrate the importance of net strain compensation for the improved optical quality of InAs QDs.Keywords
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