Subbandgap absorption spectra of slightly doped a-Si:H measured with constant photocurrent method (CPM) and photothermal deflection spectroscopy (PDS)
- 31 January 1993
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 85 (3) , 219-222
- https://doi.org/10.1016/0038-1098(93)90442-p
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Detailed investigation of doping in hydrogenated amorphous silicon and germaniumPhysical Review B, 1987
- Density of the gap states in undoped and doped glow discharge a-Si:HSolar Energy Materials, 1983
- Photothermal deflection spectroscopy and detectionApplied Optics, 1981