A review of the magneto-impurity effect in semiconductors
- 28 July 1979
- journal article
- review article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 12 (14) , 2809-2828
- https://doi.org/10.1088/0022-3719/12/14/017
Abstract
Recent observations of the magneto-impurity effect in n-GaAs, n-InP, p-Te and n- and p-Ge are reviewed. The effect is due to resonant inelastic scattering of free carriers by shallow donors or acceptors in the presence of a quantising magnetic field and gives rise to oscillatory structure in the magnetoresistance or photoconductivity.Keywords
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