Toward the development of a stable chemically amplified DUV positive photoresist

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Abstract
This paper reports the initial results of an improved chemically amplified, positive-tone photoresist for use in DUV applications. This photoresist is shown to have the following properties: low absorbance at 248 nm (0.22/micrometers ), high resolution (0.35 micrometers lines and spaces in 1.0 micrometers thick resist), and good environmental stability. The resist did not show evidence of `T-tops' nor did any linewidth change occur over a five hour period.© (1992) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

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