The behavior of the continuously charge-coupled random-access memory (C/SUP 3/RAM)
- 1 October 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 11 (5) , 591-596
- https://doi.org/10.1109/jssc.1976.1050786
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Surface charge transport with an MOS-transmission-lineSolid-State Electronics, 1977
- A 16K dynamic RAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1976
- High-sensitivity charge-transfer sense amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1975
- Resistive MOS-gated diode light sensorSolid-State Electronics, 1973
- Storage array and sense/refresh circuit for single-transistor memory cellsIEEE Journal of Solid-State Circuits, 1972
- A Nonlinear Diffusion Analysis of Charge-Coupled-Device TransferBell System Technical Journal, 1971
- A Unipolar "Field-Effect" TransistorProceedings of the IRE, 1952