Deuterium at the Si-SiO2 interface detected by secondary-ion mass spectrometry
- 15 June 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (12) , 995-997
- https://doi.org/10.1063/1.92225
Abstract
Secondary‐ion mass spectrometry (SIMS) has been used to measure depth profiles of deuterium in thermally grown films of SiO2 on Si. Deuterium is a readily traceable element which simulates hydrogen chemistry and thereby permits detection of effective changes in the hydrogen content of annealed oxides even in the presence of high background concentrations of hydrogen in the sputtering ambient or oxide layer. For oxidized silicon annealed in atomic deuterium, SIMS profiles clearly reveal an accumulation of deuterium at the Si‐SiO2 interface. It is demonstrated that the pile‐up of deuterium is not a consequence of ion migration (’’snow plowing’’) during ion sputtering.Keywords
This publication has 2 references indexed in Scilit:
- ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafersJournal of Applied Physics, 1979
- Charging of insulators by ion bombardment and its minimization for secondary ion mass spectrometry (SIMS) measurementsJournal of Applied Physics, 1976