Mean-field hopping solution in the Anderson-Hubbard model

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Abstract
The tight-binding diagonally disordered Anderson model with on-site Coulomb interaction is solved in the mean-field hopping approach. Phase diagrams of the metal-insulator transition are obtained from the free energy for the half-filled band and the binary-alloy distribution. For attractive interaction (U), the Coulomb term gives additional localizing effect and for some values of the microscopic parameters the temperature induced two transitions (insulator to metal to insulator). For U>0 two different types of behavior are distinguished. For small disorder (W≤U/2), the metallic phase can be induced by disorder, while for large W, the disorder always destroys the phase of extended states.

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