Joining solutions at the pinch-off point in “field-effect” transistor
- 1 December 1953
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Transactions of the IRE Professional Group on Electron Devices
- Vol. PGED-4 (4) , 1-14
- https://doi.org/10.1109/irepged.1953.6811074
Abstract
In a unipolar “field-effect” transistor with the drain connection biased beyond “pinch-off” in respect to the gate, the potential distribution is difficult to determine by analytic methods. Approximate solution may readily be obtained except near the “extrapolated pinch-off point.” In this publication, an approximate solution is obtained valid over the entire length of the channel.Keywords
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