Ab InitioTransport Theory for Digital Ferromagnetic Heterostructures

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Abstract
We present a theoretical density functional study of the electronic, magnetic, and transport properties of digital ferromagnetic heterostructures, obtained by δ doping GaAs with Mn. In the absence of intrinsic donors these systems have a half metallic density of states, with an exchange interaction much stronger than that of a random alloy with the same Mn concentration. Our ab initio ballistic transport calculations show that the carriers at the Fermi energy are strongly confined within a few monolayers around the MnAs plane. This strong confinement is responsible for the large exchange coupling and the two-dimensional half metallic behavior.
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