Alloy scattering effects and calculated mobility in n -type Ga 0.47 In 0.53 As
- 19 February 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (4) , 169-170
- https://doi.org/10.1049/el:19810119
Abstract
The electron Hall mobility has been calculated in the relaxation time approximation as a function of carrier concentration in n-type Ga0.47In0.53As. Comparison with measured mobilities shows excellent agreement at room temperature, but significant disagreement at 77 K. It is argued that the discrepancy between calculation and experiment is the manifestation of an alloy scattering effect with a temperature variation quite different from the T−½ dependence derived by Brooks.Keywords
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