Test of band offset commutativity by photoemission from an i n s i t u grown ZnTe/CdS/ZnTe quantum well

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Abstract
We have characterized the ZnTe–CdS heterojunction by valence and core level photoemission with synchrotron radiation, using quantum wells grown i n s i t u on ZnTe(110) substrates. The valence band offset of∼ΔE v =0.9 eV shows that this heterojunction is of the staggered type (type II), rarely encountered in experimental studies. We find evidence for chemical reaction involving Te at the interface. The band offsets at both sides of the CdS quantum well exhibit small differences on the order of 0.1 eV, which are also reflected in the dipole contribution at the interfaces. This study, while reporting only small deviations from commutativity, suggests that dipole contributions of varying magnitude, caused by interface reactions, influence the magnitude of the band offset.
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