Modeling the generation current due to donor-acceptor twins in silicon p-n junctions
- 1 March 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (3) , 628-631
- https://doi.org/10.1109/t-ed.1985.21989
Abstract
The experimental static current-voltageI-Vcharacteristics of almost ideal silicon p-n junctions are not adequately described by the classic Sah-Noyce-Shockley theory. TheI-Vcharacteristics are accurately modeled by admitting the presence of a new class of defects in addition to Shockley-Read-Hall generation-recombination centers. The new center, modeled as a donor-acceptor twin, behaves as a pure generation center.Keywords
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