InN Thermodynamics and Crystal Growth at High Pressure of N2
- 1 January 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (S1)
- https://doi.org/10.7567/jjaps.32s1.343
Abstract
InN is a wide direct gap semiconductor, which has not been yet grown in the form of large single crystals. In this work, we report the first synthesis and crystallization of InN from its constituent elements. We have also calculated p-T stability curve for this compound, up to 20 kbar, using low pressure decomposition data1) and equation of state of N2 2). We verified this curve by crystal growth experiments as well as by DTA measurements of decomposition of InN powder at high N2 pressure up to 14 kbar. InN crystals are characterized by SEM and optical absorption.Keywords
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