A simple model is presented to predict the level of localization (i.e., localization onto an atomic, bonding lobe, molecular, or band orbital) of the two- and three-hole final states in Auger lineshapes. In the spirit of the Hubbard model, the extent of localization is predicted from the one- and two-center Coulomb interaction potentials and the relevant valence bandwidths. Results from the model are compared with experiment for the N KVV lineshape from NaNO3, and the S and Si L23VV lineshapes from Li2SO4 and SiO2. These lineshapes exhibit a wide range of localization consistent with the model.