Electroabsorption in Aly Ga1−y As–Alx Ga1−x As double heterostructures
- 15 April 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 22 (8) , 372-374
- https://doi.org/10.1063/1.1654678
Abstract
The electroabsorption observed in AlyGa1−yAs–Alx Ga1−xAs (y < x) double heterostructures is strongly polarization dependent. The absorption of the TM mode which is polarized parallel to the electric heterojunction field is larger than that of the TE mode. This dichroism increases with decreasing photon energy for photon energies smaller than the band‐gap energy. The absorption is very large (up to 100 cm−1 for −10 V applied bias) for photon energies within 60 meV of the band gap. This electroabsorption effect can be used to make light intensity modulators, photodetectors, and polarizers. Very efficient intensity modulation has been demonstrated. The power necessary for 90% modulation is in the order of 0.1 mW/MHz.Keywords
This publication has 3 references indexed in Scilit:
- Efficient GaAs–AlxGa1−xAs Double-Heterostructure Light ModulatorsApplied Physics Letters, 1972
- Transverse ElectroreflectancePhysical Review Letters, 1967
- ELECTRIC-FIELD-INDUCED INFRARED ABSORPTION IN GaAs p-n JUNCTIONSApplied Physics Letters, 1966