Thermal gradients and stresses induced during the growth of silicon ribbon under electron bombardment
- 30 April 1982
- journal article
- Published by Elsevier in Solar Cells
- Vol. 5 (4) , 367-376
- https://doi.org/10.1016/0379-6787(82)90007-2
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Silicon ribbon growth using electron bombardmentApplied Physics Letters, 1982
- A study of the purification process during the elaboration by electron bombardment of polysilicon ribbons designed for photovoltaic conversionSolar Energy Materials, 1981
- Méthode de mesure de la longueur de diffusion dans des rubans de silicium polycristallin destinés à la conversion photovoltaïqueRevue de Physique Appliquée, 1981
- Silicon ribbon growth via the ribbon-to-ribbon (RTR) technique: Process update and material characterizationJournal of Electronic Materials, 1978
- Theory of molten zone shape and stabilityJournal of Crystal Growth, 1977
- Dendritic web silicon for solar cell applicationJournal of Crystal Growth, 1977
- The EFG process applied to the growth of silicon ribbons*Journal of Electronic Materials, 1975