Atomic structure, band offsets, growth and defects at high-K oxide:Si interfaces
- 30 April 2004
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 72 (1-4) , 112-120
- https://doi.org/10.1016/j.mee.2003.12.026
Abstract
No abstract availableKeywords
This publication has 48 references indexed in Scilit:
- Direct tunneling leakage current and scalability of alternative gate dielectricsApplied Physics Letters, 2002
- Application of HfSiON as a gate dielectric materialApplied Physics Letters, 2002
- Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline OxideScience, 2001
- Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal–oxide–semiconductor field-effect transistors: Effective electron mobilityApplied Physics Letters, 2001
- High-κ gate dielectrics: Current status and materials properties considerationsJournal of Applied Physics, 2001
- Crystalline zirconia oxide on silicon as alternative gate dielectricsApplied Physics Letters, 2001
- Alternative dielectrics to silicon dioxide for memory and logic devicesNature, 2000
- Band offsets of wide-band-gap oxides and implications for future electronic devicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- Crystalline Oxides on Silicon: The First Five MonolayersPhysical Review Letters, 1998
- Thermodynamic stability of binary oxides in contact with siliconJournal of Materials Research, 1996