Artificial epitaxy (diataxy) of silicon and germanium
- 1 October 1979
- journal article
- Published by Springer Nature in Acta Physica Academiae Scientiarum Hungaricae
- Vol. 47 (1) , 167-183
- https://doi.org/10.1007/bf03156522
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Oriented crystal growth on amorphous substrates using artificial surface-relief gratingsApplied Physics Letters, 1978