Visible-wavelength surface-emitting devices with a 15-fold improvement in electrical-to-optical power conversion efficiency

Abstract
An AlxGa1−xAs p-n junction light emitting diode, with a thin In2O3 current spreading layer, on the top side, and an indirect band-gap AlAs-Al0.6Ga0.4As distributed Bragg reflector, on the bottom side, has been fabricated and characterized under continuous-wave, room-temperature operation. These relatively simple modifications yield a 15-fold increase in electrical-to-optical power conversion efficiency at λ∼675 nm, and a significant reduction in active region heating—in comparison with standard devices prepared and tested as controls.

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