Properties of Al2O3-films deposited on silicon by atomic layer epitaxy
- 30 June 1997
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 36 (1-4) , 91-94
- https://doi.org/10.1016/s0167-9317(97)00022-1
Abstract
No abstract availableKeywords
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