Growth of CoAl/AlAs/GaAs metal/ semiconductor heterostructures by molecular beam epitaxy
- 31 December 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 267 (1-3) , 38-42
- https://doi.org/10.1016/0039-6028(92)91083-n
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Epitaxial metal(NiAl)-semiconductor(III–V) heterostructures by MBESurface Science, 1990
- Molecular beam epitaxial growth of ultrathin buried metal layers: (Al,Ga)As/NiAl/(Al,Ga)As heterostructuresApplied Physics Letters, 1988
- Epitaxial growth of GaAs/NiAl/GaAs heterostructuresApplied Physics Letters, 1988