Rapid thermal nitridation of SiO2 for nitroxide thin dielectrics
- 15 November 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (10) , 1113-1115
- https://doi.org/10.1063/1.96347
Abstract
Nitroxide thin films have been grown by rapid thermal nitridation of oxidized silicon in ammonia. The kinetics of formation of the surface and interface nitrogen‐rich layers has been investigated and correlated to the electrical behavior of these films. It could be concluded that rapid thermal nitridation of ≊100 Å SiO2 results in negative shift of flatband voltage, slightly increases the surface state density, increases the low‐field conductivity, reduces the high‐field conductivity, improves the dielectric breakdown field, modifies the trapping behavior of the insulator, and slows down the generation rate of new surface states due to high‐field electrical stress.Keywords
This publication has 4 references indexed in Scilit:
- Compositional Studies of Thermally Nitrided Silicon Dioxide (Nitroxide)Journal of the Electrochemical Society, 1985
- Time-dependent compositional variation in SiO2 films nitrided in ammoniaApplied Physics Letters, 1985
- Thermal nitridation of Si and SiO2for VLSIIEEE Transactions on Electron Devices, 1985
- Capture and tunnel emission of electrons by deep levels in ultrathin nitrided oxides on siliconApplied Physics Letters, 1984