DYNAMICS OF EXCITONS IN GaSe AS A FUNCTION OF TEMPERATURE

1 October 1985

journal article
Published by EDP Sciences in Le Journal de Physique Colloques

Vol. 46 (C7) , C7-191
https://doi.org/10.1051/jphyscol:1985736

Abstract

The dynamics of direct and indirect excitons, either free or localized by the layer stacking disorder is studied in GaSe at temperatures from 2 to 150 K and as a fünction of the excitation energy

Keywords

FUNCTION OF TEMPERATURE
GASE AS A FUNCTION
DYNAMICS OF EXCITONS IN GASE

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