High-speed digital modulation of ultralow threshold (w i t h o u t bias
- 13 July 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (2) , 69-71
- https://doi.org/10.1063/1.98599
Abstract
GaAlAs buried heterostructure lasers with submilliampere threshold current fabricated from single quantum well wafers can be driven directly with logic level signals without any current bias. The switch‐on delay was measured to be <50 ps and no relaxation oscillation ringing was observed. These lasers permit fully on‐off multigigabit digital switching while at the same time obviating the need for bias monitoring and feedback control.Keywords
This publication has 8 references indexed in Scilit:
- Ultralow-threshold graded-index separate-confinement single quantum well buried heterostructure (Al,Ga)As lasers with high reflectivity coatingsApplied Physics Letters, 1987
- Quantum well lasers--Gain, spectra, dynamicsIEEE Journal of Quantum Electronics, 1986
- High-speed InGaAsP constricted-mesa lasersIEEE Journal of Quantum Electronics, 1986
- Optical interconnections for VLSI systemsProceedings of the IEEE, 1984
- Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular-beam epitaxyApplied Physics Letters, 1981
- A theoretical analysis for gigabit/second pulse code modulation of semiconductor lasersIEEE Journal of Quantum Electronics, 1976
- Dynamic behaviour of semiconductor lasersElectronics Letters, 1975
- Charge storage in injection lasers and its effect on high-speed pulse modulation of laser diodeProceedings of the IEEE, 1974