The influence of ambient gas atmosphere on the liquid and solid composition at liquid phase epitaxial growth of GaAs–Alx‐Ga1−xAs layers
- 1 January 1980
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 15 (3) , 285-289
- https://doi.org/10.1002/crat.19800150307
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Stress compensation in Ga1−xAlxAs1−yPy LPE layers on GaAs substratesApplied Physics Letters, 1973
- Phase equilibria in ternary III–V systemsProgress in Solid State Chemistry, 1972
- Phase equilibria of III–V compoundsActa Metallurgica, 1963