Band Discontinuity at AlxGa1-xP/GaP Heterointerfaces Studied by Capacitance Measurements
- 1 August 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (8B) , L1161
- https://doi.org/10.1143/jjap.31.l1161
Abstract
The band discontinuity at Al x Ga1-x P/GaP heterointerfaces for varying Al content has been studied by capacitance-voltage measurements and self-consistent numerical analysis of the apparent carrier concentration profile by taking account of the true heterointerface position and donor deionization. By extrapolating the results for the Al x Ga1-x P/GaP system, it is shown that the band lineup of the AlP/GaP heterojunction is of type II with a conduction-band discontinuity of 0.23 eV. Discussion is presented of comparison with the previously reported values.Keywords
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