Polarity determination of epitaxial structures of CdTe on GaAs by channeling techniques
- 1 January 1990
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 45 (1-4) , 459-463
- https://doi.org/10.1016/0168-583x(90)90875-u
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Strain measurement of epitaxial CaF2 on Si (111) by MeV ion channelingApplied Physics Letters, 1985
- Crystallographic polarity and etching of cadmium tellurideJournal of Applied Physics, 1983
- Channeling analysis of disorder structure in neon implanted siliconNuclear Instruments and Methods, 1978