Charge transport in voltage-biased superconducting single-electron transistors
- 1 September 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 54 (10) , 7421-7424
- https://doi.org/10.1103/physrevb.54.7421
Abstract
Charge is transported through superconducting single-electron transistors at finite bias voltages by a combination of coherent Cooper-pair tunneling and quasiparticle tunneling. At low transport voltages the effect of an ‘‘odd’’ quasiparticle in the island leads to a 2e-periodic dependence of the current on the gate charge. We evaluate the I-V characteristic in the framework of a model which accounts for these effects as well as for the influence of the electromagnetic environment. The good agreement between our model calculation and experimental results demonstrates the importance of coherent Cooper-pair tunneling and parity effects. © 1996 The American Physical Society.Keywords
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