Studies of the electrical and interface properties of the metal contacts to CuInSe2 single crystals

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Abstract
The electrical behavior of the metal contacts and ITO and CdS junctions to single crystals of CuInSe2 has been studied using I–V and electron beam induced current measurements, then correlated to the chemical composition and intrinsic defect states in the semiconductor. The results have indicated that the contact resistance, junction characteristics, and crystalline order of surfaces are controlled mainly by the type and relative concentration of the intrinsic defect states dominating the copper-indium-deselenide material; these states are very sensitive to heat treatments and surface preparation procedures. Correlation between the behavior of different samples (polycrystalline thin films or single crystals) should be based upon similarities in the type and relative concentration of the chemical composition.

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