Low-temperature chemical vapor deposition of epitaxial Si and SiGe layers at atmospheric pressure
- 25 March 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (12) , 1286-1288
- https://doi.org/10.1063/1.104338
Abstract
In an effort to determine the low‐temperature limit for the growth of Si and Si1−xGex epitaxial layers in an atmospheric‐pressure chemical vapor deposition (CVD) reactor, good quality material has been obtained at temperatures down to 600 °C, using SiH2Cl2 and GeH4 in H2 ambient. Si/Si1−xGex/Si heteroepitaxial structures are of good crystalline quality as well, showing abrupt interfaces. The Si‐growth rate enhancement, caused by the addition of GeH4 to the gas flow at low temperatures, turns into growth‐rate inhibition at higher temperatures. In this experiment oxygen and water partial pressures are several orders of magnitude higher than in ultrahigh vacuum CVD, without causing noticeable negative effects.Keywords
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