Microwave power InP/InGaAs/InP double-heterojunction bipolar transistors
- 15 April 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (8) , 724-725
- https://doi.org/10.1049/el:19930484
Abstract
The first demonstration of the microwave power performance of an InP/InGaAs/InP double-heterojunction bipolar transistor (DHBT) is reported. A collector-emitter breakdown voltage in excess of 14 V was achieved with a current gain of 70. A maximum output power density of approximately 1 W/mm emitter length was measured at 5 GHz with a power gain of 8 dB. The results show the significant potential of InP based DHBTs for microwave power applications.Keywords
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