Efficient numerical simulation of the high-frequency MOS capacitance
- 1 October 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (10) , 2214-2216
- https://doi.org/10.1109/T-ED.1987.23220
Abstract
An enhancement of the MOSCAP C-V simulation program that permits efficient evaluation of the high-frequency MOS capacitance, including inversion-charge-redistribution effects, is presented. The measured C-V characteristics of a buried-channel MOS structure have been modeled successfully using the modified MOSCAP program. It has been found that the neglect of inversion-charge rearrangement in response to the high-frequency ac signal leads to a significant underestimation of the semiconductor space-charge capacitance in strong inversion for the buried-channel device.Keywords
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