Electron transmission through silicon stacking faults
- 15 March 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (8) , 5280-5282
- https://doi.org/10.1103/physrevb.41.5280
Abstract
We use a recently developed formalism [Phys. Rev. B 38, 2021 (1988)] to calculate electron transmission through silicon stacking faults. These systems are of interest both because of their effect on transport in silicon and because they can be viewed as prototypical heterostructures consisting of two different orientations of silicon.Keywords
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