Carrier gas-free chemical vapor deposition technique for in situ preparation of high quality YBa2Cu3O7−δ thin films
- 12 August 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (7) , 869-871
- https://doi.org/10.1063/1.105263
Abstract
A new carrier gas‐free metalorganic chemical vapor deposition technique was developed yielding a high deposition rate. The β‐dicetonate precursor compounds were synthesized with reproducible water content which is of great importance for their vapor pressure. With the technique described above c‐axis oriented YBa2Cu3O7−δ thin films were prepared with Tc(R=0)=91.8 K and jc(77 K)=1.3×106 A/cm2 on (100)SrTiO3 substrates and Tc(R=0)=91.1 K and jc(77 K)=3×105 A/cm2 on (100)MgO substrates at B=0 T. The influence of the metal composition on the formation of precipitation was studied by SEM investigations.Keywords
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