Polar optic phonon and Γ→L intervalley scattering times in GaAs from steady-state hot-electron luminescence spectroscopy
- 9 July 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (2) , 174-176
- https://doi.org/10.1063/1.103975
Abstract
We deduce the Γ→L intervalley and polar optic phonon scattering times of hot electrons in bulk GaAs from cw hot (e,A0) luminescence spectra at low excitation densities and their dependence on electron kinetic energy. We obtain the lifetime broadening due to these two processes from comparison with line shape calculations using a 16×16 k⋅p Hamiltonian, a full integration over k space, and a dipole model for the optical matrix elements. We find for the LO‐phonon emission time τLO=(132±10)fs. The threshold for Γ→L scattering is determined as 330±10 meV, above which a distinct decrease in total lifetime is observed. Γ→L scattering times of 150–200 fs are deduced, and we discuss a corresponding deformation potential.Keywords
This publication has 10 references indexed in Scilit:
- Hot-Electron Recombination at Neutral Acceptors in GaAs: A cw Probe of Femtosecond Intervalley ScatteringPhysical Review Letters, 1989
- Relativistic band structure and spin-orbit splitting of zinc-blende-type semiconductorsPhysical Review B, 1988
- Determination of intervalley scattering rates in GaAs by subpicosecond luminescence spectroscopyPhysical Review Letters, 1987
- Luminescence from hot electrons relaxing by LO phonon emission in p-GaAs and GaAs doping superlatticesSolid State Communications, 1985
- Subpicosecond Time-Resolved Raman Spectroscopy of LO Phonons in GaAsPhysical Review Letters, 1985
- Generation of nonequilibrium optical phonons in GaAs and their application in studying intervalley electron-phonon scatteringPhysical Review B, 1984
- A Tetrahedron Method for Doubly Constrained Brillouin Zone Integrals Application to Silicon Optic Phonon DecayPhysica Status Solidi (b), 1983
- Nonlinear optical studies of picosecond relaxation times of electrons in n-GaAs and n-GaSbApplied Physics Letters, 1983
- Spectrum and polarization of hot-electron photoluminescence in semiconductorsSoviet Physics Uspekhi, 1982
- Monte Carlo determination of electron transport properties in gallium arsenideJournal of Physics and Chemistry of Solids, 1970