Porosity-induced modification of the phonon spectrum of n-GaAs
- 1 April 1997
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 12 (4) , 491-493
- https://doi.org/10.1088/0268-1242/12/4/001
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Initiation and Formation of Porous GaAsJournal of the Electrochemical Society, 1996
- Greatly Enhanced Sub‐Bandgap Photocurrent in Porous GaP PhotoanodesJournal of the Electrochemical Society, 1996
- Surface-related phonon mode in porous GaPSolid State Communications, 1996
- Morphology and Strongly Enhanced Photoresponse of GaP Electrodes Made Porous by Anodic EtchingJournal of the Electrochemical Society, 1996
- Time resolved blue and ultraviolet photoluminescence in porous GaPApplied Physics Letters, 1995
- Anisotropic Refractive Index of Porous InP Fabricated by Anodization of (111)A SurfaceJapanese Journal of Applied Physics, 1995
- Fabrication of Vertical and Uniform-Size Porous InP Structure by Electrochemical AnodizationJapanese Journal of Applied Physics, 1994
- Visible photoluminescence from porous silicon: A quantum confinement effect mainly due to holes?Applied Physics Letters, 1992
- Porous silicon formation mechanismsJournal of Applied Physics, 1992
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990