Numerical simulation of MOS capacitance for a wide range of temperatures, impurity profiles and surface state densities
- 1 January 1982
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Simulation of impurity freezeout through numerical solution of Poisson's equation with application to MOS device behaviorIEEE Transactions on Electron Devices, 1980
- Very small MOSFET's for low-temperature operationIEEE Transactions on Electron Devices, 1977
- Computer solution of one-dimensional Poisson's equationIEEE Transactions on Electron Devices, 1975
- FREEZE-OUT CHARACTERISTICS OF THE MOS VARACTORApplied Physics Letters, 1968
- Ideal MOS Curves for SiliconBell System Technical Journal, 1966