Numerical analysis of forward and reverse bias potential distribution in a 2-dimensional p-n junction with applications to capacitance calculations
- 29 May 1969
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 5 (11) , 236-238
- https://doi.org/10.1049/el:19690181
Abstract
A method is described for the calculation of capacitance and potential distribution in a 2-dimensional p-n junction such as that at the edge of stripe transistors. The method uses a numerical solution of a modified 2-dimensional Shockley-Poisson equation on a nonuniform mesh.Keywords
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