Schottky barrier heights of nickel-platinum silicide contacts on n-type Si
- 15 February 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (4) , 229-231
- https://doi.org/10.1063/1.88708
Abstract
The barrier heights of NiPt silicide–n‐type Si have been determined from the saturation current density of diodes for various concentrations of Ni and Pt. Ni‐Pt films on Si were heated to 475 °C to obtain a NiPt silicide. The barrier height varies smoothly from that of NiSi‐Si to PtSi‐Si with increasing amounts of Pt in the NiPt films. For 19 wt% Pt the barrier is 0.69 eV and for 67 wt% Pt the height is 0.78 eV.Keywords
This publication has 3 references indexed in Scilit:
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- Formation of NiSi and current transport across the NiSi-Si interfaceSolid-State Electronics, 1971
- Metallurgical properties and electrical characteristics of palladium silicide-silicon contactsSolid-State Electronics, 1971