Improvement of peak-to-valley ratio by the incorporation of the InAs layer into the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure

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Abstract
InAs blocking layer is incorporated into the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure to improve the peak‐to‐valley ratios. It is found the ratio rises to 21 at room temperature and the peak current density keeps nearly constant for InAs layer reaches 30 A and then both of them decreases with the increase of InAs thickness. However, while the InAs blocking layer further increases to 240 A, the I‐V characteristic shows multiple negative differential resistance behavior. These interesting phenomena can be modeled to be due to the coupling effect of InAs blocking layer and GaSb well layer.