Superconducting films grown by activated reactive evaporation for high frequency device applications
- 1 November 1990
- journal article
- Published by IOP Publishing in Superconductor Science and Technology
- Vol. 3 (11) , 543-545
- https://doi.org/10.1088/0953-2048/3/11/005
Abstract
123 films were grown on MgO substrates by activated reactive evaporation (ARE). In situ post deposition cooldown was optimized at low oxygen pressure to yield films with mirror-smooth surfaces with Tc(O)=86 K, transition width c at 77 K=105 A cm-2. Surface resistance (Rs) at 60 K and 100 GHz was extremely low and comparable to Rs of films grown by laser ablation on LaA103. A film patterned in to a bandpass filter showed a Q that was nearly an order of magnitude higher than that for a gold film at 92 GHz and <50 K.Keywords
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