Direct evidence for photon recycling in p-(Ga,Al)As:Si with a graded band gap

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Abstract
Time resolved photoluminescence experiments show the importance of photon recycling in p‐(Ga,Al)As:Si liquid‐phase epitaxial layers with a graded band gap. In particular, it is confirmed that the drift of the electrons in the built‐in electric field may be neglected. Strong inhomogeneities of the electron lifetime are experimentally demonstrated and explained by the varying compensation of the amphoteric Si doping. The large contribution of photon recycling to the externally observed spectra is shown by ’’front’’ and ’’back’’ excitation of the cw photoluminescence. The internal quantum efficiency at room temperature is probably appreciably above 20%.