Ionized-cluster beam epitaxial growth of GaP films on GaP and Si substrates
- 1 December 1978
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 45, 334-339
- https://doi.org/10.1016/0022-0248(78)90459-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Ionized-cluster beam deposition and epitaxy as fabrication techniques for electron devicesThin Solid Films, 1977
- Contact and interconnect formation on compound semiconductor devices by ionized-cluster beam depositionThin Solid Films, 1976
- Molecular Beam Epitaxy of GaP and GaAs1-xPxJapanese Journal of Applied Physics, 1976
- From chemisorption to surface reactions to catalysis in catalytic oxidation reactionsJournal of Vacuum Science and Technology, 1975
- Mn-implanted ZnS thin-film electroluminescent deviceIEEE Transactions on Electron Devices, 1973