Dielectric function and surface microroughness measurements of InSb by spectroscopic ellipsometry

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Abstract
Chemomechanical polishing and anodize stripping methods are examined ellipsometrically as means of preparing <100≳ and <110≳ surfaces of InSb. Both methods leave overlayers which are identified optically as microscopically rough bulk material. A 1:1 mixture of HCl:CH3OH is shown to act as a slow chemical polish. Dielectric function data representing the bulk InSb response more accurately from 1.5 to 6.0 eV than those previously obtained by analysis of reflectance spectra are determined from samples chemically polished in HCl:CH3OH.