Flow patterns in various vertical reactors and movpe growth
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3) , 151-156
- https://doi.org/10.1016/0022-0248(86)90295-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal ReactorJournal of the Electrochemical Society, 1970