Investigation of a high-resistivity surface layer in electron irradiated silicon by schottky barrier capacitance measurements
- 16 May 1978
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 47 (1) , K91-K94
- https://doi.org/10.1002/pssa.2210470163
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- EPR studies of defects in electron-irradiated silicon: A triplet state of vacancy-oxygen complexesPhysical Review B, 1976
- A technique for directly plotting the doping profile of semiconductor wafers (“8-shaped way”)Solid-State Electronics, 1976
- Investigations of mis structure inhomogeneities using a scanning mercury probePhysica Status Solidi (a), 1973
- Capacitance-Voltage Measurements with a Mercury-Silicon DiodeJournal of the Electrochemical Society, 1972
- On the Measurement of Impurity Atom Distributions by the Differential Capacitance Technique [Letter to the Editor]IBM Journal of Research and Development, 1969