Three-level transferred-electron effects in InP

29 July 1971

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 7 (15) , 437-438
https://doi.org/10.1049/el:19710294

Abstract

Revised estimates of the velocity/field characteristic of InP are made in the light of recent experimental evidence. A limiting oscillator efficiency of about 30% is predicted.

Keywords

VELOCITY/FIELD CHARACTERISTIC
LIMITING OSCILLATOR EFFICIENCY
SEMICONDUCTOR MATERIAL
ELECTRON MOBILITY
INP
THREE LEVEL TRANSFERRED ELECTRON EFFECTS
BAND STRUCTURE